AS5C1008-20 Просмотр технического описания (PDF) - Austin Semiconductor
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AS5C1008-20 Datasheet PDF : 9 Pages
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Austin Semiconductor, Inc.
SRAM
AS5C1008
READ CYCLE TIMING 1(1)
ADDR
DOUT
tOH
PREVIOUS DATA VALID
tRC
tAA
DATA VALID
NOTE: 1. CE\ is HIGH for READ cycle.
READ CYCLE TIMING 2 (1)
CE\1
tRC
CE2
OE\
DOUT
High-Z
tACE
tAOE
tLZOE
tLZCE
tHZCE
DATA VALID
tHZCE(2)
NOTES: 1. CE\ is HIGH for READ cycle.
2. At any given temperature and voltage condition, tHZCE is less than tLZCE.
WRITE CYCLE TIMING (WE\ CONTROLLED, OE\ = LOW)
tWC
ADDR
CE\111112222333344445555666677778888999900001111222233334444555566667777111188882222999900333300444411115555666677778888
tAW tCW
111122223333t4444A5555H666611117777211112228888322223339999433334445444455565555666766667778777788898888999099990001000011121111222322223334333344454444555655556667666677787777888988889990999900010010011
AS5C1008
Rev. 3.6 6/05
CE211112222333344445555666677778888999900001111222233334444555566667777111188882222999900333300444411115555666677778888
WE\
tAS
DIN
DOUT
11112222333344445555
tHZWE
6
11112222333344445555666611117777211112228888322223339999433334445444455565555666766667778777788898888999099990001000011121111222322223334333344454444555655556667666677787777888988889990999900010010011
tWP2
tLZWE
tDS
tDH
DATA VALID
High-Z
UNDEFINED 1111222233334444 DON’T CARE
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