AS4LC4M4DG-7/IT Просмотр технического описания (PDF) - Austin Semiconductor
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AS4LC4M4DG-7/IT Datasheet PDF : 19 Pages
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RAS\
CAS\
W\
(A0 - A10)
(A0 - A10)
16 Meg FPM DRAM
Austin Semiconductor, Inc.
AS4LC4M4
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
VCC
VBB Generator
VSS
Refresh Timer
Row Decoder
Data In
Buffer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Memory Array
4,194,304 x 4
Cells
Column Decoder
Data Out
Buffer
DQ0
to
DQ3
OE\
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to VCC (VIN, VOUT) ..........-0.5V to +4.6V
Voltage on VCC supply relative to VSS (VCC)................-0.5V to +4.6V
StorageTemperature (T ).........................................-55°C to +150°C
stg
Power Dissipation (PD)....................................................................1W
Short Circuit Output Current (IOS Address).............................50mA
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability. Junction temperature depends
upon package type, cycle time, loading, ambient temperature
and airflow, and humidity (plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 3.3V +0.3V)
PARAMETER SYMBOL MIN
TYP
MAX UNITS
Supply Voltage
VCC
3.0
3.3
3.6
V
Ground
Input High Voltage
Input Low Voltage
VSS
0
VIH
2.0
VIL
-0.32
0
0
V
---
VCC + 0.31
V
---
0.8
V
NOTES:
1. VCC + .13V/15ns, Pulse width is measured at VCC
2. -1.3V/15ns, Pulse width is measured at VSS
AS4LC4M4
Rev. 0.3 7/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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