AS4LC4M16DG-6S/XT Просмотр технического описания (PDF) - Austin Semiconductor

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производитель

AS4LC4M16DG-6S/XT

4 MEG x 16 DRAM Extended Data Out (EDO) DRAM

Austin Semiconductor 

Austin Semiconductor, Inc.

DRAM

AS4LC4M16

ICC OPERATING CONDITIONS AND MAXIMUM LIMITS1,2,3,5,6

(VCC = +3.3V ±0.3V)

-5

-6

PARAMETERS

SYM

MAX

MAX UNITS

STANDBY CURRENT: TTL

RAS\ = CAS\ = VIH

ICC1

1.5

1.5

mA

STANDBY CURRENT: CMOS

(RAS\ = CAS\ > VCC - 0.2V; DQs may be left open;

Other inputs: VIN > VCC - 0.2V or VIN < 0.2V)

ICC2

1

1

mA

OPERATING CURRENT: Random READ/WRITE

Average power supply current

(RAS\, CAS\, address cycling: tRC = tRC [MIN])

ICC3

165

150

mA

OPERATING CURRENT: EDO PAGE MODE

Average power supply current

(RAS\ = VIL, CAS\, address cycling: tPC = tPC [MIN])

ICC4

125

120

mA

REFRESH CURRENT: RAS\-ONLY

Average power supply current

(RAS\ cycling, CAS\ = VIH: tRC = tRC [MIN])

ICC5

165

150

mA

REFRESH CURRENT: CBR

Average power supply current

(RAS\, CAS\, address cycling: tRC = tRC [MIN])

ICC6

165

150

mA

REFRESH CURRENT: Extended ("S" version only)

Average power supply current: CAS\ = 0.2V or CBR cycling;

RAS\ = tRAS (MIN); WE\ = VCC - 0.2V; A0 - A10, OE\ and

ICC7

1

1

mA

DIN = VCC - 0.2V or 0.2V (DIN may be left open); tRC = 125µS

REFRESH CURRENT: Self ("S" version only)

Average power supply current: CBR with RAS\ > tRASS (MIN)

and CAS\ held LOW; WE\ = VCC - 0.2V; A0 - A10, OE\ and

ICC8

1

DIN = VCC - 0.2V or 0.2V (DIN may be left open)

1

mA

NOTES

26

26

22

4, 7, 23

4, 7,

23, 37

4, 7, 37

AS4LC4M16

Rev. 1.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

8

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