AS4LC4M16DG-6S/XT Просмотр технического описания (PDF) - Austin Semiconductor

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AS4LC4M16DG-6S/XT

4 MEG x 16 DRAM Extended Data Out (EDO) DRAM

Austin Semiconductor 

Austin Semiconductor, Inc.

DRAM

AS4LC4M16

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Relative to VSS .......................................-1V to +4.6V

Voltage on NC, Inputs or I/O Pins

Relative to VSS...................................................-1V to +4.6V

Power Dissipation...........................................................................1W

Operating temperature range, TA (ambient)..............-55°C to 125°C

Storage temperature (plastic)......................................-55°C to 150°C

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the

operation section of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods

may affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS1

(VCC = +3.3V ±0.3V)

PARAMETERS

SYM

MIN

MAX

UNITS NOTES

SUPPLY VOLTAGE

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

INPUT LEAKAGE CURRENT:

Any input at VIN (0V < VIN < VCC +0.3V);

All other pins not under test = 0V

VCC

3

3.6

V

VIH

2

VCC + 0.3

V

35

VIL

-0.3

0.8

V

35

II

-2

2

µA

36

OUTPUT LEAKAGE CURRENT:

Any input at VOUT (0V < VOUT < VCC +0.3V);

DQ is disabled and in High-Z state

IOZ

-5

5

µA

OUTPUT HIGH VOLTAGE:

IOUT = -2mA

OUTPUT LOW VOLTAGE:

IOUT = 2mA

VOH

2.4

---

V

VOL

---

0.4

V

AS4LC4M16

Rev. 1.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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