AS4LC4M16DG-6/IT Просмотр технического описания (PDF) - Austin Semiconductor

Номер в каталоге

Компоненты Описание

производитель

AS4LC4M16DG-6/IT

4 MEG x 16 DRAM Extended Data Out (EDO) DRAM

Austin Semiconductor 

Austin Semiconductor, Inc.

DRAM

AS4LC4M16

EDO PAGE MODE (Continued)

two methods to disable the outputs and keep them disabled

during the CAS\ HIGH time. The first method is to have OE\

HIGH when CAS\ transitions HIGH and keep OE\ HIGH for

tOEHC thereafter. This will disable the DQs, and they will

remain disabled (regardless of the state of OE\ after that point)

until CAS\ falls again. The second method is to have OE\ LOW

when CAS\ transitions HIGH and then bring OE\ HIGH for a

minimum of tOEP anytime during the CAS\ HIGH period. This

will disable the DQs, and they will remain disabled (regardless

of the state of OE\ after that point) until CAS\ falls again (see

Figure 3). During other cycles, the outputs are disabled at tOFF

time after RAS\ and CAS\ are HIGH or at tWHZ after WE\

transitions LOW. The tOFF time is referenced from the rising

edge of RAS\ or CAS\, whichever occurs last. WE\ can also

perform the function of disabling the output drivers under

certain conditions, as shown in Figure 4.

EDO-PAGE-MODE operations are always initiated with a

row address strobed in by the RAS\ signal, followed by a

column address strobed in by CAS\, just like for single location

accesses. However, subsequent column locations within the

row may then be accessed at the page mode cycle time. This is

accomplished by cycling CAS\ while holding RAS\ LOW and

entering new column addresses with each CAS\ cycle.

Returning RAS\ HIGH terminates the EDO-PAGE-MODE

operation.

DRAM REFRESH

The supply voltage must be maintained at the specified

levels, and the refresh requirements must be met in order to

retain stored data in the DRAM. The refresh requirements are

met by refreshing all rows in the 4 Meg x 16 DRAM array at

least once every 64ms* (4,096 rows). The recommended

procedure is to execute 4,096 CBR REFRESH cycles, either

uniformly spaced or grouped in bursts, every 64ms*. The

DRAM refreshes one row for every CBR cycle. For this device,

executing 4,096 CBR cycles will refresh the entire device. The

CBR REFRESH will invoke the internal refresh counter for auto-

matic RAS\ addressing. Alternatively, RAS\-ONLY RE-

FRESH capability is inherently provided. However, with this

method, only one row is refreshed on each cycle. JEDEC

strongly recommends the use of CBR REFRESH for this device.

An optional self refresh mode is also available on the “S”

version. The self refresh feature is initiated by performing a

CBR Refresh cycle and holding RAS\ low for the specified tRASS.

The “S” option allows the user the choice of a fully static,

low-power data retention mode or a dynamic refresh mode at

the extended refresh period of 128ms, or 31.25µs per cycle, when

using a distributed CBR refresh. This refresh rate can be

applied during normal operation, as well as during a standby or

battery backup mode.

The self refresh mode is terminated by driving RAS\ HIGH

for a minimum time of tRPS. This delay allows for the completion

of any internal refresh cycles that may be in process at the time

of the RAS\ LOW-to-HIGH transition. If the DRAM controller

uses a distributed CBR refresh sequence, a burst refresh is not

required upon exiting self refresh, however, if the controller is

using RAS\ only or burst CBR refresh then a burst refresh

using tRC (MIN) is required.

NOTES:

*64ms for IT version, 32ms for XT version.

AS4LC4M16

Rev. 1.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

6

Share Link: