AS4C4M4DG-6/IT Просмотр технического описания (PDF) - Austin Semiconductor
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AS4C4M4DG-6/IT Datasheet PDF : 19 Pages
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16 Meg FPM DRAM
Austin Semiconductor, Inc.
AS4C4M4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS1,2
(CONTINUED)
SYMBOL
PARAMETER
tDS Data set-up time
tDH Data hold time
tREF Refresh period
tWCS Write command set-up time
tCWD CAS\ to W\ delay time
tRWD RAS\ to W\ delay time
tAWD Column address to W\ delay time
tCPWD CAS\ precharge to W\ delay time
tCSR CAS\ set-up time (CAS\-before-RAS\ refresh)
tCHR CAS\ hold time (CAS\-before-RAS\ refresh)
tRPC RAS\ to CAS\ precharge time
tCPA Access time from CAS\ precharge
tPC Fast Page cycle time
tPRWC Fast Page read-modify-write cycle time
tCP CAS\ precharge time (Fast Page Cycle)
tRASP RAS\ pulse width (Fast Page Cycle)
tRHCP RAS\ hold time from CAS\ precharge
tOEA OE\ access time
tOED OE\ to data delay
tOEZ Output buffer turn off delay time from OE\
tOEH OE\ command hold time
tWTS Write command set-up time (Test mode in)
tWTH Write command hold time (Test mode in)
tWRP W\ to RAS\ precharge time (C\-B-R\ refresh)
tWRH W\ to RAS\ hold time (C\-B-R\ refresh)
tRASS RAS\ pulse width (C\-B-R\ self refresh)
tRPS RAS\ precharge time (C\-B-R\ self refresh)
tCHS CAS\ hold time (C\-B-R\ self refresh)
-60
MIN MAX
0
10
32
0
40
85
55
60
5
10
5
35
40
85
10
60 100K
35
15
15
0
15
15
10
10
10
10
100
110
-50
-70
MIN MAX
0
12
32
0
45
90
60
65
5
15
5
40
45
95
10
70 100K
40
17
17
0
17
17
10
10
10
10
110
120
-50
UNITS NOTES
ns
9
ns
9
ms
ns
7
ns
7
ns
7
ns
7
ns
ns
ns
ns
ns
3
ns
ns
ns
ns
ns
ns
ns
ns
6
ns
ns
11
ns
11
ns
ns
us 13, 14, 15
ns 13, 14, 15
ns 13, 14, 15
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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