AS4C4M4DG-6/XT Просмотр технического описания (PDF) - Austin Semiconductor
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AS4C4M4DG-6/XT Datasheet PDF : 19 Pages
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16 Meg FPM DRAM
Austin Semiconductor, Inc.
AS4C4M4
CAPACITANCE (TA < +25oC ; Vcc = 5V +10%)
PARAMETER
SYMBOL
Input capacitance (A0 - A11)
CIN1
Input capacitance (RAS\, CAS\, W\, OE\)
CIN2
Output capacitance (DQ0 - DQ3)
CDQ
MAX
6
8
8
UNITS
pF
pF
pF
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS1,2
(-55oC<TA<+125oC & -40oC<TA<+85oC; Vcc = 5V +10%; VIH/VIL = 2.4/0.8V; VOH/VOL = 2.4/0.4V)
-60
-70
SYMBOL
PARAMETER
MIN MAX MIN MAX UNITS NOTES
tRC Random read or write cycle time
110
130
ns
tRWC Read-modify-write cycle time
155
185
ns
tRAC Access time from RAS\
60
70
ns
3, 4, 10
tCAC Access time from CAS\
15
20
ns
3, 4, 5
tAA Access time from column address
30
35
ns
3, 10
tCLZ CAS\ to output in Low-Z
0
0
ns
3
tOFF Output buffer turn-off delay
0
15
0
15
ns
6
tT Transition time (raise and fall)
3
50
3
50
ns
2
tRP RAS\ precharge time
40
50
ns
tRAS RAS\ pulse width
60
10K
70
10K
ns
tRSH RAS\ hold time
15
17
ns
tCSH CAS\ hold time
60
65
ns
tCAS CAS\ pulse width
15
10K
18
10K
ns
tRCD RAS\ to CAS\ delay time
20
45
25
50
ns
4
tRAD RAS\ to column address delay time
15
30
17
35
ns
10
tCRP CAS\ to RAS\ precharge time
5
5
ns
tASR Row address set-up time
0
0
ns
tRAH Row address hold time
10
10
ns
tASC Column address set-up time
0
0
ns
tCAH Column address hold time
10
12
ns
tRAL Column address to RAS\ lead time
30
35
ns
tRCS Read command set-up time
0
0
ns
tRCH Read command hold time referenced to CAS\
0
0
ns
8
tRRH Read command hold time referenced to RAS\
0
0
ns
8
tWCH Write command hold time
10
12
ns
tWP Write command pulse width
10
12
ns
tRWL Write command to RAS\ lead time
15
17
ns
tCWL Write command to CAS\ lead time
15
17
ns
AS4C4M4
Rev. 1.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
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