APW7065 Просмотр технического описания (PDF) - Anpec Electronics
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APW7065 Datasheet PDF : 19 Pages
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APW7065
Electrical Characteristics (Cont.)
Unless otherswise specified, these specifications apply over VCC=12V and TA =-20~70oC. Typlcal values are
at TA=25oC.
Symbol
Parameter
Test Conditions
APW7065
Unit
Min Typ Max
ERROR AMPLIFIER (Cont.)
ICOMP COMP Source Current
ICOMP COMP Sink Current
GATE DRIVERS
IUGATE Upper Gate Source Current
IUGATE Upper Gate Sink Current
ILGATE Lower Gate Source Current
ILGATE Lower Gate Sink Current
RUGATE Upper Gate Source Impedance
RUGATE Upper Gate Sink Impedance
RLGATE Lower Gate Source Impedance
RLGATE Lower Gate Sink Impedance
TD Dead Time
PROTECTIONS
VCOMP=2V
VCOMP=2V
BOOT = 12V, VUGATE -VPHASE = 2V
BOOT = 12V, VUGATE -VPHASE = 2V
VCC = 12V, VLGATE = 2V
VCC = 12V, VLGATE = 2V
BOOT = 12V, IUGATE = 0.1A
BOOT = 12V, IUGATE = 0.1A
VCC = 12V, ILGATE = 0.1A
VCC = 12V, ILGATE = 0.1A
5
mA
5
mA
2.6
A
1.05
A
4.9
A
1.4
A
23Ω
1.6 2.4 Ω
1.3 1.95 Ω
1.25 1.88 Ω
20
nS
VOCP Over-Current Reference Voltage TA =-20~70°C
VUVP
Under-Voltage Threshold
Trip Point
Percent of VREF
SOFT-START
0.23 0.27 0.31 V
45 50 55 %
TSS Soft-Start Interval
2 3.4 5 ms
Note 3: Guaranteed by design.
Functional Pin Description
BOOT (Pin 1)
GND (Pin 3)
A bootstrap circuit with a diode connected to VCC is
used to create a voltage suitable to drive a logic-level
N-channel MOSFET.
UGATE (Pin 2)
Connect this pin to the high-side N-channel MOSFET’s
gate. This pin provides gate drive for the high-side
MOSFET.
The GND terminal provides return path for the IC’s bias
current and the low-side MOSFET driver’s pull-low
current. Connect the pin to the system ground via very
low impedance layout on PCBs.
LGATE (Pin 4)
Connect this pin to the low-side N-channel MOSFET’s
gate. This pin provides gate drive for the low-side
MOSFET.
Copyright © ANPEC Electronics Corp.
5
Rev. A.1 - Feb., 2006
www.anpec.com.tw
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