APM4431KC-TR Просмотр технического описания (PDF) - Anpec Electronics

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Компоненты Описание

производитель

APM4431KC-TR

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM4431K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

VDSS

VGSS

ID*

IDM*

IS*

TJ

TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

PD* Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

VGS=-10V

TA=25°C

TA=100°C

Rating

-30

±20

-5.3

-20

-2.3

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

APM4431K

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA

-30

IDSS Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

TA=25°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=-250µA

-1

IGSS Gate Leakage Current

VGS=±20V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

VGS=-10V, IDS=-5.3A

VGS=-4.5V, IDS=-2A

ISD=-2.3A, VGS=0V

Dynamic Characteristics b

RG Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=-25V,

Frequency=1.0MHz

td(ON)

Tr

td(OFF)

Tf

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

VDD=-15V,RL=-15Ω,

IDS=-1A,VGEN=10V,

RG=6Ω

-1

-30

-1.5 -2

±100

32 40

50 60

-0.8 -1.3

4

1460

225

155

12 22

15 22

35 58

15 30

Unit

V

µA

V

nA

mΩ

V

Ω

pF

ns

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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