APM4430KC-TUL Просмотр технического описания (PDF) - Anpec Electronics
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APM4430KC-TUL Datasheet PDF : 10 Pages
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APM4430K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
VGS=10V
TA=25°C
TA=100°C
Rating
30
±20
12.5
50
3.2
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4430K
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
30
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
VGS=10V, IDS=12.5A
VGS=5V, IDS=7A
ISD=2.3A, VGS=0V
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω,
1
30
1.5 2
±100
4.5 5
7
8
0.7 1.3
1.7
4720
815
240
21 38
15 27
102 148
37 55
Unit
V
µA
V
nA
mΩ
V
Ω
pF
ns
Copyright ANPEC Electronics Corp.
2
Rev. B.2 - Apr., 2005
www.anpec.com.tw
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