APM3055LUC-TUL Просмотр технического описания (PDF) - Anpec Electronics

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Компоненты Описание

производитель

APM3055LUC-TUL

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM3055LU

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

APM3055LU

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

30

IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

1

IGSS Gate Leakage Current

VGS=±20V, VDS=0V

RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=12A

VGS=4.5V, IDS=6A

Diode Characteristics

VSDa Diode Forward Voltage

ISD=6A, VGS=0V

Dynamic Characteristicsb

RG Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

td(ON)

Tr

td(OFF)

Tf

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

VDD=15V, RL=15Ω,

IDS=1A, VGEN=10V,

RG=6Ω

Gate Charge Characteristicsb

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=15V, VGS=10V,

IDS=12A

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

V

1

µA

30

1.5 2

V

±100 nA

75 100

mΩ

100 200

0.7 1.3 V

2.6

Ω

230

60

pF

30

4

7

11 22

ns

15 21

3

5

6.2 8.5

1.2

nC

1.2

Copyright © ANPEC Electronics Corp.

3

Rev. B.3 - Oct., 2005

www.anpec.com.tw

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