APM2055NVC-TR Просмотр технического описания (PDF) - Anpec Electronics
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APM2055NVC-TR Datasheet PDF : 10 Pages
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APM2055N
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθjA
Parameter
Maximum Power Dissipation
TA=25°C
TA=100°C
TO-252
SOT-223
TO-252
SOT-223
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
50
3
10
1.2
150
-55 to 150
50
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VSD Diode Forward Voltage
Dynamic
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Test Condition
VGS=0V, ID=250µA
VDS=16V, VGS=0V
VDS=VGS, ID=250µA
VGS=±16V, VDS=0V
VGS=10V, ID=12A
VGS=4.5V, ID=6A
VGS=2.5V, ID=2A
IS=2A, VGS=0V
VDS=15V, VGS=4.5V,
ID=1.5A
VDD=15V, ID=2A,
VGS=10V, RG=6Ω
APM2055N
Min. Typ. Max. Unit
20
V
1
µA
0.7 0.9 1.5
V
±100 nA
55
70
75
90 mΩ
140 160
0.7 1.3
V
7
8.5
2.5
nC
1.5
9.2 18.6
14
27
ns
31
58
16
21
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - Feb., 2003
www.anpec.com.tw
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