HM-6617/883 Просмотр технического описания (PDF) - Intersil

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производитель

HM-6617/883

2K x 8 CMOS PROM

Intersil 

HM-6617/883

Absolute Maximum Ratings

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V

Typical Derating Factor . . . . . . . . . . . . 5mA/MHz Increase in ICCOP

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Operating Conditions

Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC

Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.8V

Input High Voltage . . . . . . . . . . . . . . . . . . . . . . +2.4V to VCC +0.3V

Thermal Resistance

SBDIP Package . . . . . . . . . . . . . . . . . .

48θoJCA/W

9oθCJC/W

Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5473 Gates

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of

the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

TABLE 1. HM-6617/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

PARAMETER

SYMBOL

(NOTES 1, 4)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

MIN MAX

High Level Output Voltage VOH1 VCC = 4.5V, IO = -2.0mA

1, 2, 3

-55oC ≤ TA ≤ +125oC 2.4

-

Low Level Output Voltage VOL VCC = 4.5V, IO = +4.8mA

1, 2, 3

-55oC ≤ TA ≤ +125oC

-

0.4

High Impedance Output

Leakage Current

IIOZ VCC = 5.5V, G = 5.5V,

VI/O = GND or VCC

1, 2, 3

-55oC ≤ TA ≤ +125oC -1.0

1.0

Input Leakage Current

II

VCC = 5.5V, VI = GND or

VCC, P Not Tested

1, 2, 3

-55oC ≤ TA ≤ +125oC -1.0

1.0

Standby Supply Current

ICCSB VI = VCC or GND,

VCC = 5.5V, IO = 0mA

1, 2, 3

-55oC ≤ TA ≤ +125oC

-

100

Operating Supply Current ICCOP VCC = 5.5V, G = GND,

1, 2, 3

-55oC ≤ TA ≤ +125oC

-

20

(Note 3), f = 1MHz, IO =

0mA, VI = VCC or GND

Functional Test

FT VCC = 4.5V (Note 6)

7, 8A, 8B -55oC ≤ TA ≤ +125oC

-

-

UNITS

V

V

µA

µA

µA

mA

TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

PARAMETER SYMBOL

(NOTES 1, 2, 4)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

HM-6617/883

MIN MAX UNITS

Address Access Time TAVQV VCC = 4.5V and 5.5V (Note 5)

9, 10, 11

-55oC ≤ TA ≤ +125oC -

140

ns

Output Enable Access

Time

TGLQV VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC -

50

ns

Chip Enable Access

Time

TELQV VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC -

120

ns

Address Setup Time

TAVEL VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC 20

-

ns

Address Hold Time

TELAX VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC 25

-

ns

Chip Enable Low Width TELEH VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC 120

-

ns

Chip Enable High Width TEHEL VCC = 4.5V and 5.5V

9, 10, 11

-55oC ≤ TA ≤ +125oC 40

-

ns

3

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