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NEL200101-24 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NEL200101-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
NEC => Renesas Technology
NEL200101-24 Datasheet PDF : 12 Pages
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Gain (dB)
11
10
9
8
7
0.5 W 1.0 W
20
24
28
32
36
–25
–30
IM
3
–35
IM
5
–40
IM
7
–45
–50
NEL200101-24
f = 1970 MHz
Class AB, V
cc
= 24 V
I
q
= 20 mA
Class A, V
cc
= 20 V
I
q
= 100 mA
60
η
c
(%)
50
40
30
20
P
out
(dBm)
f1 = 1970 MHz
f2 = 1970.1 MHz
Class AB, V
cc
= 24 V
I
q
= 20 mA
Class A, V
cc
= 20 V
I
q
= 100 mA
–55
–60
20
4
24
28
32
P
out
(dBm) ··· PEP
36
40
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