NEL200101-24 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NEL200101-24

NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

Collector to Emitter Cutoff

ICES

Current

Collector to Emitter Voltage

(Base to Emitter Registor = 10 Ω)

VCER

Collector to Emitter Voltage

(Open Base)

VCEO

Collector to Base Voltage

(Open Emitter)

VCBO

Emitter to Base Voltage

(Open Collector)

VEBO

DC Forward Current Gain

hFE

Output Capacitance

Cob

SPECIFIED CONDITION

VCE = 24 V

IC = 1 mA, R = 10 Ω

IC = 1 mA

IC = 1 mA

IC = 3 mA

VCE = 5 V, IC = 0.1 A

VCE = 24 V, f = 1 MHz

NEL200101-24

MIN.

TYP.

MAX.

1

UNIT

mA

30

85

V

18

22

V

45

85

V

3

4.4

V

30

100

150

3

pF

2

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