NEL200101-24 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

производитель

NEL200101-24

NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC => Renesas Technology 

DATA SHEET

SILICON POWER TRANSISTOR

NEL200101-24

NPN SILICON EPITAXIAL TRANSISTOR

L Band Power Amplifier

DESCRIPTION AND APPLICATIONS

OUTLINE DIMENSIONS (Unit: mm)

NEL2001012-24 of NPN epitaxial microwave power transistors

is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and

offers a high degree of reliability.

1.5 ±0.2

3

FEATURES

• High Linear Power and Gain

• Low Internal Modulation Distortion

• High Reliability Gold Metallization

• Emitter Ballasting

• 24 V Operation

ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)

φ7 ±0.3

2

2 ±0.2

3.0

6.2 ±0.2

1

1 - EMITTER

2 - BASE

3 - COLLECTOR

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector to Emitter Voltage

Collector Current

Power Dissipation

Thermal Resistance

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCER

VEBO

VCEO

IC

PT

Rth(j-c)

Tj

Tstg

SPECIFIED CONDITION

R = 10 Ω

RATINGS

45

30

3

18

0.5

7.4

23.6

200

–65 to 150

UNIT

V

V

V

V

A

W

˚C/W

˚C

˚C

Document No. P11581EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

Share Link: