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NEL2012F02-24 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NEL2012F02-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
NEC => Renesas Technology
NEL2012F02-24 Datasheet PDF : 12 Pages
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NEL2012F03-24
NEL2012F03-24
Typical Pout (PEP) - Intermodulation (IM) Characteristics
IM
–20
[dBc]
Class AB (f = 1.97 GHz, V
CC
= 24 V, Icq = 0.075A)
IM3
–30
IM5
–40
IM7
–50
–60
20
30
40
P
OUT
(PEP)[dBm]
IM
–20
[dBc]
–30
–40
–50
–60
20
Class A (f = 1.97 GHz, V
CC
= 20 V, Icq = 0.75A)
IM3
30
P
OUT
(PEP)[dBm]
IM5
IM7
40
4
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