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NEL2012F03-24 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NEL2012F03-24
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
NEC => Renesas Technology
NEL2012F03-24 Datasheet PDF : 12 Pages
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NEL2012F03-24
NEL2012F03-24
Typical Pout-Gain, Collector Efficiency (N
C
) and Collector Current (I
C
) Characteristics
Gain
[dB]
Class AB
Nc
Ic
[%] [A]
18
3
17
2.8
16
2.6
15
2.4
14
2.2
13
Gain
12
11
10
100 2
90
1.8 freq = 1.970 GHz
U
CC
= 24.0 V
80
1.6
Icq = 0.075 A
70
1.4
9
60
1.2
8
50
1
7
40
.8
Nc
Ic
6
30
.6
5
20
.4
4
10
.2
3
0
0
28
30
32
34
36
38
40
42
Pout [dBm]
Gain
[dB]
Class A
Nc
Ic
[%] [A]
18
3
17
2.8
16
2.6
Gain
15
2.4
14
2.2
13
100 2.0
12
90
1.8 freq = 1.970 GHz
U
CC
= 20.0 V
11
80
1.6
Icq = 0.750 A
10
70
1.4
9
60
1.2
8
50
1
Ic
Nc
7
40
.8
6
30
.6
5
20
.4
4
10
.2
3
0
0
24
26
28
30
32
34
36
38 Pout [dBm]
3
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