NEL2012F02-24 Просмотр технического описания (PDF) - NEC => Renesas Technology

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NEL2012F02-24

NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

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PRELIMINARY DATA SHEET

SILICON POWER TRANSISTOR

NEL2012F03-24

NPN SILICON EPITAXIAL TRANSISTOR

L BAND POWER AMPLIFIER

DESCRIPTION

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/

PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

reliability.

FEATURES

High Linear Power and Gain

Low Internal Modulation Distortion

High Reliability Gold Metalization

Emitter Ballasting

24 V Operation

APPLICATION

Digital Cellular : PCN/PCS etc.

Digital Cordless : PHS etc.

ORDERING INFORMATION

Part Number

NEL2012F03-24

Package Outline

F03

PACKAGE DIMENSIONS

(Unit: mm)

2.8 ± 0.2

2 × φ 3.3 ± 0.3

2

1

3

18.9 ± 0.3

14.2 ± 0.3

6.35 ± 0.4

PIN CONNECTIONS

1. EMITTER

2. BASE

3. COLLECTOR

The information in this document is subject to change without notice.

Document No. P11768EJ1V0DS00 (1st edition)

Date Published June 1997 N

Printed in Japan

©

1996

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