RF1K4915496 Просмотр технического описания (PDF) - Intersil

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Компоненты Описание

производитель

RF1K4915496

2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET™ Power MOSFET

Intersil 

RF1K49154

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Drain Current Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Power Dissipation . . .

Derate Above 25oC

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PD

..

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

RF1K49154

60

60

±20

2

Refer to Peak Current Curve

Refer to UIS Curve

2

0.016

-55 to 150

300

260

UNITS

V

V

V

A

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

BVDSS

VGS(TH)

ID = 250µA, VGS = 0V, (Figure 12)

VGS = VDS, ID = 250µA, (Figure 11)

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Drain to Source On Resistance

Turn-On Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

IDSS

IGSS

rDS(ON)

tON

td(ON)

tr

td(OFF)

tf

VDS = 55V, VGS = 0V

VDS = 50V, VGS = 0V, TC = 150oC

VGS = ±20V

ID = 2A, VGS = 10V, (Figures 9, 10)

VDD = 30V, ID ≈ 2A,

RL = 15Ω, VGS = 10V,

RGS = 25Ω

(Figure 14)

Turn-Off Time

Total Gate Charge

Gate Charge at 10V

Threshold Gate Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Ambient

tOFF

Qg(TOT)

Qg(10)

Qg(TH)

CISS

COSS

CRSS

RθJA

VGS = 0V to 20V

VGS = 0V to 10V

VGS = 0V to 2V

VDD = 48V,

ID = 2A,

RL = 24Ω

(Figure 14)

VDS = 25V, VGS = 0V,

f = 1MHz (Figure 13)

Pulse Width = 1s

Device Mounted on FR-4 Material

MIN

TYP

MAX UNITS

60

-

-

V

2

-

4

V

-

-

1

µA

-

-

250

µA

-

-

±10

µA

-

-

0.130

Ω

-

-

50

ns

-

10

-

ns

-

25

-

ns

-

70

-

ns

-

35

-

ns

-

-

155

ns

-

26

32

nC

-

14

17

nC

-

0.8

1.0

nC

-

340

-

pF

-

140

-

pF

-

40

-

pF

-

-

62.5

oC/W

Source to Drain Diode Specifications

PARAMETER

Source to Drain Diode Voltage

Reverse Recovery Time

SYMBOL

TEST CONDITIONS

VSD

ISD = 2A

trr

ISD = 2A, dISD/dt = 100A/µs

MIN

TYP

MAX UNITS

-

-

1.5

V

-

-

62

ns

2

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