FRL430D Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
FRL430D Datasheet PDF : 6 Pages
| |||
FRL430D, FRL430R, FRL430H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source
(Note 4, 6)
BVDSS FRL430D, R VGS = 0, ID = 1mA
500
-
V
Breakdown Volts
(Note 5, 6)
BVDSS FRL430H
VGS = 0, ID = 1mA
475
-
V
Gate-Source
(Note 4, 6)
VGS(th) FRL430D, R VGS = VDS, ID = 1mA
2.0
4.0
V
Threshold Volts
(Note 3, 5, 6) VGS(th) FRL430H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
(Note 4, 6)
IGSSF FRL430D, R VGS = 20V, VDS = 0
-
Leakage Forward
(Note 5, 6)
IGSSF FRL430H
VGS = 20V, VDS = 0
-
100
nA
200
nA
Gate-Body
(Note 2, 4, 6) IGSSR FRL430D, R VGS = -20V, VDS = 0
-
Leakage Reverse
(Note 2, 5, 6) IGSSR FRL430H
VGS = -20V, VDS = 0
-
100
nA
200
nA
Zero-Gate Voltage (Note 4, 6)
IDSS
FRL430D, R VGS = 0, VDS = 400V
-
Drain Current
(Note 5, 6)
IDSS
FRL430H
VGS = 0, VDS = 400V
-
25
µA
100
µA
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
VDS(on)
VDS(on)
FRL430D, R
FRL430H
VGS = 10V, ID = 2A
VGS = 16V, ID = 2A
-
5.25
V
-
7.88
V
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
RDS(on)
RDS(on)
FRL430D, R
FRL430H
VGS = 10V, ID = 1A
VGS = 14V, ID = 1A
-
2.50
Ω
-
3.75
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12
5. Gamma = 1000KRAD(Si). Neutron = 3E12
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 10/29/90 on TA 17635 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
4-3
Share Link: 