AP4405GM Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP4405GM Datasheet PDF : 5 Pages
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Advanced Power
Electronics Corp.
AP4405GM
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
8.2mΩ
-14A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-30
+20
-14
-11.3
-50
2.5
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200806201
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