AP3990P Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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производитель
AP3990P Datasheet PDF : 4 Pages
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20
T C =25 o C
16
12
10V
7.0V
6.0V
8
4
V G =5.0V
0
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.3
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP3990P
12
T C =150 o C
10
8
10V
7 .0V
6 .0V
6
V G =5 0V
4
2
0
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.2
I D =5A
2.8 V G =10V
2.4
2
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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