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AP4303BM-DTRE1(2005) Просмотр технического описания (PDF) - BCD Semiconductor

Номер в каталоге
Компоненты Описание
производитель
AP4303BM-DTRE1
(Rev.:2005)
BCDSEMI
BCD Semiconductor BCDSEMI
AP4303BM-DTRE1 Datasheet PDF : 12 Pages
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Data Sheet
QUAD OP AMP AND VOLTAGE REFERENCE
AP4303
Electrical Characteristics (Continued)
Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.
Parameter
Conditions
Op Amp Section (per Op Amp)
(VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)
Input Offset Voltage
TA = 25oC
TA = -40 to 85oC
Input Offset Voltage Temperature TA = -40 to 85oC
Drift
Min Typ Max Unit
0.5
3
mV
5
7 µV/ oC
Input Offset Current
TA = 25oC
2
30
nA
Input Bias Current
TA = 25oC
20
150
nA
Input Voltage Range
VCC = 0 to 18V
0
VCC -
V
1.5
Common Mode Rejection Ratio
TA = 25oC, VCM = 0 to 3.5V
70
85
dB
Large Signal Voltage Gain
VCC = 15V, RL = 2k, VO = 1.4 to 11.4V
85
100
dB
Power Supply Rejection Ratio
VCC = 5 to 18V
70
90
dB
Output Current
Source
VCC = 15V, VID = 1V, VO = 2V
20
40
mA
Sink
VCC = 15V, VID = -1V, VO = 2V
10
20
mA
Output Voltage Swing (High)
VCC = 18, RL = 10k, VID = 1V
16
16.5
V
Output Voltage Swing (Low)
VCC = 18, RL = 10k, VID = -1V
17
100 mV
Slew Rate
VCC = 18V, RL = 2k, AV = 1,
VIN = 0.5 to 2V, CL = 100pF
0.3
0.5
V/µ s
Gain Bandwidth Product
VCC = 18V, RL = 2k, CL = 100pF,
VIN = 10mV, f=100kHz
0.7
1
MHz
Apr. 2005 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7

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