AP2141D Просмотр технического описания (PDF) - Diodes Incorporated.
Номер в каталоге
Компоненты Описание
производитель
AP2141D Datasheet PDF : 18 Pages
| |||
AP2141D/ AP2151D
Electrical Characteristics (@TA = +25°C, VIN = +5V, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
VUVLO Input UVLO
1.6
ISHDN Input Shutdown Current
Disabled, IOUT = 0
IQ
Input Quiescent Current
Enabled, IOUT = 0
ILEAK Input Leakage Current
Disabled, OUT grounded
IREV Reverse Leakage Current
RDS(ON) Switch On-Resistance
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
SOT25, MSOP-8,
VIN = 5V,
IOUT = 0.5A
TA = +25°C MSOP-8EP, SO-8
U-DFN2018-6
-40°C ≤ TA ≤ +85°C
VIN = 3.3V, IOUT = TA = +25C
0.5A
-40°C ≤ TA ≤ +85°C
ISHORT Short-Circuit Current Limit
ILIMIT Over-Load Current Limit
Enabled into short circuit, CL = 22µF
VIN = 5V, VOUT = 4.0V, CL = 120µF, -40°C ≤ TA ≤ +85°C
0.6
ITRIG Current limiting trigger threshold Output Current Slew Rate (<100A/s) , CL = 22µF
ISINK
tD(ON)
tR
tD(OFF)
tF
EN Input leakage
Output turn-on delay time
Output turn-on rise time
Output turn-off delay time
Output turn-off fall time
VEN = 5V
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
CL = 1µF, RLOAD = 10Ω
RFLG FLG output FET on-resistance IFLG =10mA
tBLANK FLG blanking time
CIN = 10µF, CL = 22µF
4
RDIS Discharge resistance (Note 5)
VIN = 5V, disabled, IOUT = 1mA
tDIS
TSHDN
Discharge Time
Thermal Shutdown Threshold
CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V
Enabled, RLOAD = 1kΩ
THYS Thermal Shutdown Hysteresis
SOT25 (Note 6)
θJA
Thermal Resistance Junction-to- SO-8 (Note 6)
Ambient
MSOP-8EP (Note 7)
U-DFN2018-6 (Note 7)
Typ
1.9
0.5
45
0.1
0.1
95
90
120
0.6
0.8
1.0
0.05
0.6
0.05
0.05
20
7
100
0.6
140
25
170
127
67
70
Max
Unit
2.5
V
1
µA
70
µA
1
µA
1
µA
115
110
140
mΩ
140
170
A
1.0
A
A
1
µA
ms
1.5
ms
ms
0.1
ms
40
Ω
15
ms
Ω
ms
C
C
°C/W
Notes:
5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
AP2141D/ AP2151D
Document number: DS32242 Rev. 4 - 2
4 of 18
www.diodes.com
May 2013
© Diodes Incorporated
Share Link: 