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AP2213M-2.5E1(2007) Просмотр технического описания (PDF) - BCD Semiconductor

Номер в каталоге
Компоненты Описание
производитель
AP2213M-2.5E1
(Rev.:2007)
BCDSEMI
BCD Semiconductor BCDSEMI
AP2213M-2.5E1 Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet
500mA LOW NOISE LDO REGULATOR
AP2213
Electrical Characteristics (Continued)
AP2213-3.0 Electrical Characteristics
VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2),
unless otherwise specified.
Parameter
Ripple Rejection
Current Limit
Output Noise
Symbol
PSRR
ILIMIT
eno
Conditions
f=100Hz, IOUT=100µA
VOUT=0V
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
Min Typ Max Unit
75
dB
700 1000 mA
260
nV / Hz
Enable Input Logic-low
Voltage
VIL
Regulator shutdown
0.4
V
0.18
Enable Input Logic-high Voltage
Enable Input Logic-low Current
Enable Input Logic-high Current
VIH
Regulator enabled
IIL
VIL0.4V
VIL0.18V
IIH
VIL2.0V
VIL2.0V
2.0
V
0.01
1
µA
2
5
20
µA
25
Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oCTJ125oC) below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
9

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