2213M-3.3E1(2007) Просмотр технического описания (PDF) - BCD Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2213M-3.3E1
(Rev.:2007)

500mA LOW NOISE LDO REGULATOR

BCD Semiconductor 

Data Sheet

500mA LOW NOISE LDO REGULATOR

AP2213

Electrical Characteristics

AP2213-2.5 Electrical Characteristics

VIN=3.5V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),

unless otherwise specified.

Parameter

Symbol

Conditions

Min Typ Max Unit

Output Voltage Accuracy

Output Voltage

Temperature Coefficient

(Note 3)

∆VOUT/VOUT

∆VOUT/∆T

(∆VOUT/VOUT)/∆T

Variation from specified

VOUT

-1

-2

120

48

1

%

2

µV/oC

ppm/oC

Line Regulation

Load Regulation

(Note 4)

Dropout Voltage (Note 5)

Standby Current

Ground Pin Current

(Note 6)

VRLINE

VRLOAD

VDROP

ISTD

IGND

VIN=3.5V to 13.2V

IOUT=0.1mA to 500mA

IOUT=100µA

IOUT=50mA

IOUT=100mA

IOUT=150mA

IOUT=300mA

IOUT=500mA

VEN≤0.4V (shutdown)

VEN≤0.18V (shutdown)

VEN≥2.0V, IOUT=100µA

VEN≥2.0V, IOUT=50mA

VEN≥2.0V, IOUT=150mA

VEN≥2.0V, IOUT=300mA

VEN≥2.0V, IOUT=500mA

1.5 4.5

12

mV

1

7

17

mV

15 50

70

110 150

230

140 250

300

mV

165 275

350

250 400

500

350 600

700

0.01 1

µA

5

100 150

180

µA

350 600

800

1.3 1.9

2.5

4

10

mA

15

11 20

28

Mar. 2007 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

6

Share Link: