AP2210K-3.0TRG1 Просмотр технического описания (PDF) - BCD Semiconductor

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AP2210K-3.0TRG1

300mA RF ULDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA RF ULDO REGULATOR

AP2210

Electrical Characteristics (Continued)

AP2210-3.3 Electrical Characteristics

VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),

unless otherwise specified.

Parameter

Symbol

Conditions

Min Typ Max Unit

Output Voltage Accuracy

Output Voltage

Temperature Coefficient

(Note 3)

∆VOUT/VOUT

∆VOUT/∆T

(∆VOUT/VOUT)/∆T

Variation from specified

VOUT

-1

-2

120

36.3

1

%

2

µV/oC

ppm/oC

Line Regulation

Load Regulation

(Note 4)

Dropout Voltage (Note 5)

Standby Current

Ground Pin Current

(Note 6)

Ripple Rejection

Current Limit

Output Noise

VRLINE

VRLOAD

VDROP

ISTD

IGND

PSRR

ILIMIT

eno

VIN=4.3V to 13.2V

IOUT=0.1mA to 300mA

IOUT=100µA

IOUT=50mA

IOUT=100mA

IOUT=150mA

IOUT=300mA

VEN≤0.4V (shutdown)

VEN≤0.18V (shutdown)

VEN≥2.0V, IOUT=100µA

VEN≥2.0V, IOUT=50mA

VEN≥2.0V, IOUT=150mA

VEN≥2.0V, IOUT=300mA

f=100Hz, IOUT=100µA

VOUT=0V

IOUT=50mA, COUT=2.2µF,

100pF from BYP to GND

1.5 4.5

12

mV

1

6

30

mV

15

50

70

110 150

230

140 250

mV

300

165 275

350

250 400

500

0.01 1

µA

5

100 150

180

µA

350 600

800

1.3 1.9

2.5

mA

4

10

15

75

dB

450 900 mA

260

nV / Hz

Jul. 2011 Rev. 1. 5

BCD Semiconductor Manufacturing Limited

11

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