AP2129K-1.2TRG1(2008) Просмотр технического описания (PDF) - BCD Semiconductor

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AP2129K-1.2TRG1
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2129

Electrical Characteristics (Continued)

AP2129-ADJ Electrical Characteristics

(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Reference Voltage

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

Quiescent Current

Standby Current

Power Supply

Rejection Ratio

Output Voltage

Temperature Coefficient

Output Current Limit

Short Current Limit

Soft Start Time

RMS Output Noise

Shutdown "High" Voltage

Symbol

Conditions

VREF

VIN=1.8V

1mA≤IOUT≤300mA

VIN

IOUT(MAX)

∆VOUT

/(∆IOUT*VOUT)

∆VOUT

/(∆VIN*VOUT)

IQ

VIN-VOUT=1V,

1mA≤IOUT≤300mA

VOUT+0.5V≤VIN≤6V

IOUT=30mA

VIN=VOUT+1V, IOUT=0mA

ISTD

VIN=VOUT+1V,

VSHUTDOWN in off mode

PSRR

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

(∆VOUT/VOUT)

/∆T

IOUT=30mA, -40oC≤TJ≤85oC

ILIMIT

ISHORT

tUP

VNOISE

VOUT=0V

TA=25oC, 10Hz ≤f≤100kHz

Shutdown input voltage "High"

Min Typ

0.748 0.8

1.8

450

Max Unit

0.816 V

6

V

mA

0.6 %/A

0.06 %/V

60

90

µA

0.1

1.0

µA

65

dB

65

dB

45

dB

±100

ppm/oC

400

50

50

60

1.5

mA

mA

µs

µVrms

6

V

Shutdown "Low" Voltage

Shutdown input voltage "Low"

0

0.4

V

VOUT Discharge MOSFET

RDS(ON)

Shutdown Pull Down Resis-

tance

Thermal Shutdown

Thermal Shutdown Hysteresis

Shutdown input voltage "Low"

60

Ω

3

MΩ

165

oC

30

oC

Jul. 2008 Rev. 1. 0

BCD Semiconductor Manufacturing Limited

7

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