AP2129K-ADJTRG1(2008) Просмотр технического описания (PDF) - BCD Semiconductor

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AP2129K-ADJTRG1
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics (Continued)

AP2129

VIN

VOUT

VOUT

VShutdown

Figure 16. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=4 to 5V, VOUT=3.3V)

VOUT

VShutdown

Figure 18. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=0.8V)

Figure 17. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=3.3V)

100

I =10mA

90

OUT

I =300mA

OUT

80

ripple=1Vpp, C =1µF, V =0.8V

OUT

OUT

70

60

50

40

30

20

10

0

100

1000

10000

100000

Frequency (Hz)

Figure 19. PSSR vs. Frequency

Jul. 2008 Rev. 1. 0

BCD Semiconductor Manufacturing Limited

11

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