AP2128K-1.0TRG1 Просмотр технического описания (PDF) - BCD Semiconductor
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AP2128K-1.0TRG1 Datasheet PDF : 21 Pages
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless oth-
erwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Current Limit
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
Soft Start Time
Shutdown "High" Voltage
Symbol
VOUT
VIN
IOUT(MAX)
ILIMIT
∆VOUT
/(∆IOUT*VOUT)
∆VOUT
/(∆VIN*VOUT)
VDROP
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
ISHORT
tUP
Conditions
VIN=2.5V
1mA≤IOUT≤300mA
VIN=2.5V,
VOUT=98%×VOUT
VIN=2.5V
VIN=2.5V,
1mA≤IOUT≤300mA
VIN=2.5V to 6V
IOUT=30mA
VOUT=1.0V, IOUT=300mA
VOUT=1.2V, IOUT=300mA
VOUT=1.5V, IOUT=300mA
VOUT=1.8V, IOUT=300mA
VIN=2.5V, IOUT=0mA
VIN=2.5V,
VSHUTDOWN in off mode
Ripple 1Vp-p
VIN=3V
f=100Hz
f=1KHz
f=10KHz
IOUT=30mA, -40oC≤TA≤85oC
VOUT=0V
Shutdown input voltage "High"
Min
98%×
VOUT
2.5
300
1.5
Typ
400
450
1400
1200
900
600
60
0.1
68
68
54
±100
50
50
Max Unit
102%× V
VOUT
6
V
mA
mA
0.6 %/A
0.06 %/V
1500
1300
mV
1000
700
90
µA
1.0
µA
dB
dB
dB
ppm/oC
mA
µs
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low" 0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown Pull Down Resis-
tance
Shutdown input voltage "Low"
60
Ω
3
MΩ
Thermal Shutdown
Thermal Shutdown Hysteresis
Thermal Resistance
θJC
SOT-23-5
165
oC
30
oC
150
oC/W
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
7
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