AP2128K-4.75TRG1 Просмотр технического описания (PDF) - BCD Semiconductor
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AP2128K-4.75TRG1 Datasheet PDF : 21 Pages
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics
(AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Current Limit
Load Regulation
Line Regulation
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
Soft Start Time
RMS Output Noise
Shutdown "High" Voltage
Symbol
Conditions
VREF
VIN=2.5V
1mA≤IOUT≤300mA
VIN
IOUT(MAX)
VIN=2.5V,
VOUT=98%×VOUT
ILIMIT
VIN=2.5V
∆VOUT
/(∆IOUT*VOUT)
∆VOUT
/(∆VIN*VOUT)
IQ
ISTD
PSRR
VIN=2.5V,
1mA≤IOUT≤300mA
VIN=2.5V to 6V
IOUT=30mA
VIN=2.5V, IOUT=0mA
VIN=2.5V,
VSHUTDOWN in off mode
Ripple 1Vp-p
VIN=3V
f=100Hz
f=1KHz
f=10KHz
(∆VOUT/VOUT)
/∆T
IOUT=30mA, -40oC≤TA≤85oC
ISHORT
tUP
VNOISE
VOUT=0V
TA=25oC, 10Hz ≤f≤100kHz,
VOUT=0.8V
Shutdown input voltage "High"
Min
0.784
2.5
300
1.5
Typ
0.8
400
450
60
0.1
68
68
54
±100
50
50
60
Shutdown "Low" Voltage
VOUT Discharge MOSFET
RDS(ON)
Shutdown Pull Down Resis-
tance
Shutdown input voltage "Low" 0
Shutdown input voltage "Low"
60
3
Thermal Shutdown
165
Thermal Shutdown Hysteresis
30
Thermal Resistance
θJC
SOT-23-5
150
Max Unit
0.816 V
6
V
mA
mA
0.6 %/A
0.06 %/V
90
µA
1.0 µA
dB
dB
dB
ppm/oC
mA
µs
µVrms
6
V
0.4
V
Ω
MΩ
oC
oC
oC/W
Oct. 2009 Rev. 1.8
BCD Semiconductor Manufacturing Limited
6
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