AP2126 Просмотр технического описания (PDF) - BCD Semiconductor

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AP2126

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Typical Performance Characteristics (Continued)

AP2126

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40

-20

V =3.3V

OUT

No heatsink

0

20

40

60

80

Case Temperature(oC)

100 120

IOUT

VOUT

Figure 12. Power Dissipation vs. Case Temperature

Figure 13. Load Transient

(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)

VIN

VOUT

VOUT

VShutdown

Figure 14. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=4 to 5V, VOUT=3.3V)

Jun. 2008 Rev. 1.1

8

Figure 15. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=3.3V)

BCD Semiconductor Manufacturing Limited

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