AP2125K-3.3TRE1 Просмотр технического описания (PDF) - BCD Semiconductor

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AP2125K-3.3TRE1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2125

Electrical Characteristics (Continued)

AP2125-2.8 Electrical Characteristics

(VIN=3.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Output Voltage

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

Dropout Voltage

Quiescent Current

Symbol

VOUT

VIN

IOUT(MAX)

VRLOAD

VRLINE

VDROP

IQ

Conditions

Min Typ Max Unit

VIN=3.8V

1mA≤IOUT≤30mA

2.744 2.8 2.856 V

6

V

VIN-VOUT=1V, VOUT=2.74V

300

360

mA

VIN=3.8V

1mA≤IOUT≤300mA

11

mV

3.8V≤VIN≤6V

IOUT=30mA

1

mV

IOUT=10mA

IOUT=100mA

6.5

10

65

100

mV

IOUT=300mA

200 300

VIN=3.8V, IOUT=0mA

60

90

µA

Standby Current

Power Supply

Rejection Ratio

ISTD

PSRR

VIN=3.8V

VCE in OFF mode

Ripple 0.5Vp-p f=100Hz

VIN=3.8V

f=1KHz

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)/∆T IOUT=30mA

Short Current Limit

RMS Output Noise

CE "High" Voltage

ISHORT

VNOISE

VOUT=0V

10Hz ≤f≤100kHz

CE input voltage "High"

CE "Low" Voltage

CE input voltage "Low"

Thermal Shutdown

Thermal Shutdown Hyster-

esis

0.01

1.0

µA

65

dB

65

dB

±100

ppm/oC

50

mA

50

µVrms

1.5

V

0.4

V

160

oC

25

oC

May. 2010 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

8

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