AP2122AK-1.5TRE1 Просмотр технического описания (PDF) - BCD Semiconductor

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AP2122AK-1.5TRE1

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

BCD Semiconductor 

Data Sheet

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

AP2122

Absolute Maximum Ratings (Note 1)

Parameter

Symbol

Value

Unit

Input Voltage

VIN

6.5

V

Enable Input Voltage

VCE

-0.3 to VIN+0.3

V

Output Current

IOUT

300

mA

Junction Temperature

TJ

150

oC

Storage Temperature Range

TSTG

-65 to 150

oC

Lead Temperature (Soldering, 10sec)

Thermal Resistance (Note 2)

TLEAD

θJA

260

oC

250

oC/W

ESD (Human Body Model)

ESD

2000

V

ESD (Machine Model)

ESD

200

V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-

tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a

function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-

perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) -

TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.

Recommended Operating Conditions

Parameter

Input Voltage

Operating Junction Temperature Range

Symbol

VIN

TJ

Min

Max

Unit

2

6

V

-40

85

oC

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

5

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