AP2120N-2.5TRG1 Просмотр технического описания (PDF) - BCD Semiconductor

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Компоненты Описание

производитель

AP2120N-2.5TRG1

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

BCD Semiconductor 

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Absolute Maximum Ratings (Note 1)

Parameter

Input Voltage

Enable Input Voltage

Output Current

Junction Temperature

Storage Temperature Range

Lead Temperature (Soldering, 10sec)

Thermal Resistance (Note 2)

ESD (Human Body Model)

ESD (Machine Model)

Symbol

VIN

VCE

IOUT

TJ

TSTG

TLEAD

θJA

ESD

ESD

Value

6.5

-0.3 to VIN+0.3

300

150

-65 to 150

260

250

2000

200

Data Sheet

AP2120

Unit

V

V

mA

oC

oC

oC

oC/W

V

V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-

tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a

function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-

perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) -

TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.

Recommended Operating Conditions

Parameter

Input Voltage

Operating Junction Temperature Range

Symbol

VIN

TJ

Min

Max

Unit

2

6

V

-40

85

oC

Nov. 2009 Rev. 1. 0

BCD Semiconductor Manufacturing Limited

5

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