AA038N2-00 Просмотр технического описания (PDF) - Alpha Industries
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AA038N2-00 Datasheet PDF : 2 Pages
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28–40 GHz GaAs MMIC
Low Noise Amplifier
AA038N1-00, AA038N2-00
Features
I Single Bias Supply Operation (4.5 V)
Chip Outline
I 3.8 dB Typical Noise Figure at 38 GHz
1.355
I 17 dB Typical Small Signal Gain
1.274
I 0.25 µm Ti/Pd/Au Gates
1.267
I 100% On-Wafer RF, DC and Noise Figure
0.588
Testing
0.087
0.124
I 100% Visual Inspection to MIL-STD-883
0.000
MT 2010
Description
Alpha’s four-stage reactively-matched 28–40 GHz GaAs
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.8 dB at 38 GHz. The
chip uses Alpha’s proven 0.25 µm low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Electrical Specifications at 25°C (VDS = 4.5 V)
AA038N1-00
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression1
Thermal Resistance2
Condition
F = 28–40 GHz
F = 38 GHz
F = 28–40 GHz
F = 28–40 GHz
F = 38 GHz
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
6 VDC
10 dBm
175°C
Symbol
IDS
G
NF
RLI
RLO
P1 dB
ΘJC
Min.
15
Typ.3
35
17
3.8
-10
-8
6
101
Max.
50
4.2
-6
-6
Unit
mA
dB
dB
dB
dB
dBm
°C/W
AA038N2-00
Parameter
Condition
Drain Current
Small Signal Gain
F = 37–39.5 GHz
Noise Figure
F = 38 GHz
Input Return Loss
F = 37–39.5 GHz
Output Return Loss
Output Power at 1 dB Gain Compression1
Thermal Resistance2
F = 37–39.5 GHz
F = 38 GHz
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
Symbol
Min. Typ.3 Max. Unit
IDS
35
50
mA
G
17
19
dB
NF
3.8
4.2
dB
RLI
RLO
P1 dB
ΘJC
-14
-6
dB
-11
-8
dB
6
dBm
101
°C/W
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 12/99A
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