AOD446 Просмотр технического описания (PDF) - Unspecified
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AOD446 Datasheet PDF : 6 Pages
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AOD446
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=37.5V
8
ID=5A
A
6
4
2
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
400
350
Ciss
300
250
200
150
Coss
100
50
Crss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
200
TJ(Max)=175°C, TC=25°C
10µs
160
10.0 RDS(ON)
limited
1ms 100µs
120
10ms
80
1.0
DC
40
TJ(Max)=175°C
TC=25°C
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=7.5°C/W
1
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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