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AO7408

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

Electrical Characteristics (TJ=25°C unless otherwise noted)

AO7408

N-Channel Enhancement Mode Field

Effect Transistor

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

VDS=16V, VGS=0V

IGSS

VGS(th)

ID(ON)

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

VDS=0V, VGS=±8V

VDS=VGS ID=250µA

VGS=4.5V, VDS=5V

VGS=4.5V, ID=2.2A

RDS(ON)

gFS

VSD

IS

Static Drain-Source On-Resistance

VGS=2.5V, ID=2.0A

VGS=1.8V, ID=1A

Forward Transconductance

VDS=5V, ID=1.6A

Diode Forward Voltage

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

20

TJ=55°C

0.4

10

TJ=125°C

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=4.5V, VDS=10V, ID=2.2A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=5V, VDS=10V, RL=4.5Ω,

tD(off)

Turn-Off DelayTime

RGEN=6Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=2.2A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=2.2A, dI/dt=100A/µs

Typ

0.6

67

99

78

96

6.7

0.69

499

65

56

3

6.02

0.41

1.35

6.5

8

61

16

23.2

8.6

Max Units

V

1

µA

5

100 nA

0.8

V

A

82

mΩ

125

95 mΩ

120 mΩ

S

1

V

0.91 A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

SOA curve provides a single pulse rating.

Rev 2 : June 2005

2/4

www.freescale.net.cn

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