AO4884
40V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=20V
8
ID=10A
6
2500
2000
Ciss
1500
4
2
0
0
100
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
TA=150°C
TA=25°C
TA=100°C
TA=125°C
10
1
10
100
1000
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
10000
1000
1000
500
Coss
0
Crss
0
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
RDS(ON)
10.0 limited
10µs
100µ
1.0
1m
TJ(Max)=150°C
10ms
0.1
TA=25°C
10s
DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
1000
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