AO4818B Просмотр технического описания (PDF) - Unspecified

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AO4818B

30V Dual N-channel MOSFET

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AO4818B

30V Dual N-channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

10 µA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1.2 1.8 2.4

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

48

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=8A

TJ=125°C

15.5 19

mΩ

21

25

VGS=4.5V, ID=6A

18.5 26 mΩ

gFS

Forward Transconductance

VDS=5V, ID=8A

30

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75 1

V

IS

Maximum Body-Diode Continuous Current

2.5

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

600 740 888 pF

77 110 145 pF

50

82 115 pF

0.5 1.1 1.7

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

12

15

18

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=8A

6

7.5

9

nC

2.5

nC

Qgd

Gate Drain Charge

3

nC

tD(on)

Turn-On DelayTime

5

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=1.8Ω,

3.5

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

19

ns

tf

Turn-Off Fall Time

3.5

ns

trr

Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs

6

8

10

ns

Qrr

Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs

14

18

22

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

2/6

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