HGTP12N60B3D Просмотр технического описания (PDF) - Intersil
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HGTP12N60B3D Datasheet PDF : 7 Pages
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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
300
RG = 25Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 25Ω, L = 1mH, VCE = 480V
130
120
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
80
TJ = 25oC, VGE = 10V OR 15V
70
60
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
180
DUTY CYCLE < 0.5%, VCE = 10V
160 PULSE DURATION = 250µs
140
TC = 25oC
TC = -55oC
120
100
80
TC = 150oC
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
Ig (REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0 5 10 15 20 25 30 35 40 45 50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
2.5
2.0
CIES
FREQUENCY = 1MHz
1.5
1.0
0.5
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
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