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AO4612

60V Complementary Enhancement Mode Field Effect Transistor

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AO4612

60V Complementary Enhancement

Mode Field Effect Transistor

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

60

V

IDSS

Zero Gate Voltage Drain Current

VDS=48V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

100

nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1

2.1

3

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

20

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=4.5A

TJ=125°C

46

56

mΩ

79

VGS=4.5V, ID=3A

64

77

mΩ

gFS

Forward Transconductance

VDS=5V, ID=4.5A

11

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.74

1

V

IS

Maximum Body-Diode Continuous Current

3

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

450

540

pF

60

pF

25

pF

1.65

2

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

8.5

10.5

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=30V, ID=4.5A

4.3

5.5

nC

1.6

nC

Qgd

Gate Drain Charge

2.2

nC

tD(on)

Turn-On DelayTime

4.7

7

ns

tr

Turn-On Rise Time

VGS=10V, VDS=30V, RL=6.7Ω,

2.3

4.5

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

15.7

24

ns

tf

Turn-Off Fall Time

1.9

4

ns

trr

Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs

27.5

35

ns

Qrr

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs

32

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in

any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve

provides a single pulse rating. Rev3: Oct 2010

2/9

www.freescale.net.cn

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