AO3416 Просмотр технического описания (PDF) - Unspecified

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AO3416

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO3416, AO3416L

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package.

Features

VDS (V) = 20V

ID = 6.5 A

RDS(ON) < 22mΩ (VGS = 4.5V)

RDS(ON) < 26mΩ (VGS = 2.5V)

RDS(ON) < 34mΩ (VGS = 1.8V)

ESD Rating: 2000V HBM

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±8

6.5

5.2

30

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

65

85

Maximum Junction-to-Lead C

Steady-State

RθJL

43

Max

90

125

60

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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