AO3460 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO3460 Datasheet PDF : 4 Pages
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AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
30
VDS=30V
25
8
ID=0.65A
20
6
VDS=0V, VGS=±10V
15
4
VDS=VGS ID=250µA
10
2
5
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Ciss
Coss
Crss
10
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
10.000
1.000
10µs
100µs
0.100
RDS(ON)
limited
DC
0.010
0.001
TJ(Max)=150°C
TC=25°C
0.01
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1ms
10ms
0.1s
1s
10s
100
20
TJ(Max)=150°C
16
TA=25°C
12
8
4
0
0.0001 0.001 0.01 0.1
1
10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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