AO3460 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO3460 Datasheet PDF : 4 Pages
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AO3460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3460/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC
converters. It is ESD protected. AO3460 and
AO3460L are electrically identical.
-RoHS Compliant
-AO3460L is Halogen Free
Features
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
RDS(ON) < 1.7Ω (VGS = 10V)
RDS(ON) < 2Ω (VGS = 4.5V)
D1
TO-236
(SOT-23)
Top View
G1
G
D
S
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain TA=25°C
Current A, F
TA=70°C
ID
Pulsed Drain Current B
IDM
0.65
0.5
1.6
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
70
100
Maximum Junction-to-Lead C
Steady-State
RθJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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