AO3424(2011) Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO3424 Datasheet PDF : 5 Pages
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AO3424
30V N-Channel MOSFET
General Description
Product Summary
The AO3424 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
30V
3.8A
< 55mΩ
< 65mΩ
< 85mΩ
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
70
100
Maximum Junction-to-Lead
Steady-State
RθJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: January 2011
www.aosmd.com
Page 1 of 5
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