AO3415(2011) Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO3415 Datasheet PDF : 5 Pages
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AO3415
20V P-Channel MOSFET
General Description
Product Summary
The AO3415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
RDS(ON) (at VGS= -1.8V)
ESD protected
-20V
-4A
< 41mΩ
< 53mΩ
< 65mΩ
SOT23
Top View
Bottom View
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
65
85
Maximum Junction-to-Lead
Steady-State
RθJL
43
Max
80
100
52
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 7: Sep 2011
www.aosmd.com
Page 1 of 5
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