AO3406 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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AO3406

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO3406

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3406 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3406 is Pb-free

(meets ROHS & Sony 259 specifications). AO3406L

is a Green Product ordering option. AO3406 and

AO3406L are electrically identical.

Features

VDS (V) = 30V

ID = 3.6A (VGS = 10V)

RDS(ON) < 65mΩ (VGS = 10V)

RDS(ON) < 105mΩ (VGS = 4.5V)

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±20

3.6

2.9

15

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

70

100

Maximum Junction-to-Lead C

Steady-State

RθJL

63

Max

90

125

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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