AO4443(2011) Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO4443 Datasheet PDF : 5 Pages
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AO4443
40V P-Channel MOSFET
General Description
Product Summary
The AO4443 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
-40V
-6A
< 42mΩ
< 63mΩ
D
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-40
±20
-6
-5
-40
20
20
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
31
59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max
40
75
24
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: August 2011
www.aosmd.com
Page 1 of 5
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